Samsung 2nd Generation 10nm FinFET Provides Greater Performance, Lower Power Consumption

By Jeff Harris, Posted: 04/21/17 09:00AM EDT
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Samsung 10nm FinFET SoC
Samsung's newest System-on-Chip (SoC) product based on 10-nanometer (nm) FinFET technology(Photo : Aban Tech/YouTube Screenshot)

Last October 2016, Samsung Electronics announced that it has commenced mass production of its newest System-on-Chip (SoC) product based on 10-nanometer (nm) FinFET technology. With a 10nm FinFET SoC, Samsung made history as the first company to ever create such a powerful chip.

Samsung 2nd Generation 10nm FinFET

Fast forward, Samsung Electronics is coming back to its production facilities this time for its second generation 10nm FinFET process technology with 10LPP (Low Power Plus) according to Samsung Newsroom. The enhancement in 3D FinFET structure in addition of 10LPP allows this SoC to reach up to 10-percent higher performance or 15-percent lower power consumption than the first generation 10LPE (Low-Power Early) process for the same area scaling.

"With our successful 10LPE production experience, we have commenced production of the 10LPP to maintain our leadership in the advanced-node foundry market," said Ryan Lee, Samsung Electronics VP of Foundry Marketing. Lee added, "10LPP will be one of our key process offerings for high performance mobile, computing and network applications, and Samsung will continue to offer the most advanced logic process technology."

As the first in the industry to begin mass production of system-on-chips (SoCs) products on 10LPE, Samsung has started installing production equipment at its newest S3-line in Hwaseong, Korea. The said facility is expected to be ready for production by the fourth quarter of this year.

Samsung plans to beat Samsung

WCCFTech believes that Samsung is planning to use this SoC to power their upcoming Galaxy Note 8 to differentiate it from the recently released Galaxy S8 and Galaxy S8+ in terms of performance and energy efficiency. These latest Samsung smartphones are powered by Exynos 8895 (international) or Snapdragon 835 (North America).

PC Mag is certain that with the inception of this 2nd generation 10nm FinFET process technology with 10LPP, future Samsung devices with have a better performance boost. Given the 10 percent performance gain or 15 percent lower power consumption, this will surely surpass whatever Samsung Galaxy S8 and S8+ has reached.



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